Samsung unveils higher capacity HBM3E memory for faster AI training and inference

Samsung just announced HBM3E 12H DRAM with advanced TC NCF technology – fans of acronyms must be excited at reading this, but for everyone else here’s what that means. HBM stands for “high bandwidth memory” and it does what it says on the tin.

In October Samsung unveiled HBM3E Shinebolt, an enhanced version of the third generation of HBM that could achieve 9.8Gbps per pin (and 1.2 terabytes per second for the whole package).

Next, 12H. This is simply the number of chips that have been stacked vertically in each module, 12 in this case. This is a way to fit more memory in a module and…

​ Samsung just announced HBM3E 12H DRAM with advanced TC NCF technology – fans of acronyms must be excited at reading this, but for everyone else here’s what that means. HBM stands for “high bandwidth memory” and it does what it says on the tin.

In October Samsung unveiled HBM3E Shinebolt, an enhanced version of the third generation of HBM that could achieve 9.8Gbps per pin (and 1.2 terabytes per second for the whole package).

Next, 12H. This is simply the number of chips that have been stacked vertically in each module, 12 in this case. This is a way to fit more memory in a module and…   Read More GSMArena.com – Latest articles