Samsung announced that is has started mass production of the new 9th generation vertical NAND (V-NAND) memory chips. They have 50% higher bit density than 8th generation products.
Additionally, the 9th gen products support a new NAND flash interface called “Toggle 5.1” that enables data transfer speeds of up to 3.2Gbps, this is 33% higher than previous generations. To top it all off, the new chips are 10% more power efficient.
A lot of work went into the 9th generation of V-NAND. Samsung used new innovations like cell interference avoidance and cell life extension. Also, the company…
Samsung announced that is has started mass production of the new 9th generation vertical NAND (V-NAND) memory chips. They have 50% higher bit density than 8th generation products.
Additionally, the 9th gen products support a new NAND flash interface called “Toggle 5.1” that enables data transfer speeds of up to 3.2Gbps, this is 33% higher than previous generations. To top it all off, the new chips are 10% more power efficient.
A lot of work went into the 9th generation of V-NAND. Samsung used new innovations like cell interference avoidance and cell life extension. Also, the company… Read More GSMArena.com – Latest articles
+ There are no comments
Add yours